New version of the amplifier-discriminator chip CMP16 1. The chip was submitted to MOSIS using the AMI 1.2 micron technology on November 18, 1998. Design name: CMP16 (stands for Carnegie Mellon - Petersburg, 16 channels). Description: 16-channel amplifier-discriminator ASIC for the anode signals from the muon endcap CSC's. The new version of the chip is based on the previous one with an attempt to improve its behavior according to the CERN test beam results (summer 1998). 2. The beam test results have shown: The anode electronics on the chamber could operate with thresholds of 40 - 60 fC and they needs significant improvement to work with a threshold of 20 fC. Also, the anode amplifier can go into "latch-up" mode, where all channels on a chip put out a continuous output. Fortunately, this is not a catastrophe for the chip, but to fix it it is necessary to switch off the power on the chip and switch it back on (this would be a problem for the real set-up). The anode amplifier has input noise of 1.0-1.5 fC at Cin=0 pF (the calculated value was 1.0 fC). The measured time resolution for the anode electronics is about right (less than 0.5 nsec for the test signal). 3. Modifications. 3.1 The new iteration of the chip has the same channel structure but there are some changes inside the boxes (see the "Front end anode channel structure"). In the preamplifier (PA), all changes are directed to improve the noise behavior and prevent the latch-up mode. For this: - the area of the input transistor was increased by a factor of two; - the "current source" of the collector load is replaced by a passive resistor. In the shaper stage (Sh.) - the "conveyer" shaper is replaced by an "active R-C" shaper. In this case, the shaping time constant T=R*C is more stable vs. the various transistor parameters and regimes. The high threshold enable discriminator (DE) - made very symmetrical. The constant fraction shaper (ShT) - modified to increase the input amplitude range. 3.2 Layout changes: chip size - 4.69 x 3.64 mm; increased the ground bus width inside the chip; increased the power bus width inside the chip; "guard ring" divided into two sections - one each for input and output; improved isolation between channels; improved isolation between analog and digital parts of each channel; added filtering capacitors for each channel. 3.3 Packaging: new package - Quad Plastic Package (QPP) 14 x 14 mm; the chip substrate is connected to the "ground" pins;